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 RF3376General Purpose Amplifier
RF3376
GENERAL PURPOSE AMPLIFIER
RoHS Compliant & Pb-Free Product Package Style: SOT89
Features
DC to >6000MHz Operation Internally Matched Input and Output 22dB Small Signal Gain +2.0dB Noise Figure +11dBm Output P1dB
1 RF IN
GND 4 2 GND 3 RF OUT
GaAs pHEMT Si CMOS Si BJT
Applications
Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications
Functional Block Diagram
Product Description
The RF3376 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DCbiasing elements to operate as specified.
Ordering Information
RF3376 RF3376PCBA-410 General Purpose Amplifier Fully Assembled Evaluation Board
Optimum Technology Matching(R) Applied
GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaN HEMT
RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc.
Rev A6 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8
RF3376
Absolute Maximum Ratings Parameter
Input RF Power Operating Ambient Temperature Storage Temperature ICC
Rating
+3 -40 to +85 -60 to +150 40
Unit
dBm C C mA
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
Parameter
Overall
Frequency Range 3dB Bandwidth Gain
Min.
Specification Typ.
DC to >6000 2
Max.
Unit
MHz GHz dB dB dB dB Freq=500MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz Freq=6000MHz dB Freq=2000MHz
Condition
T=25 C, ICC =35mA (See Note 1.)
22.0 21.0 18.0
23.5 22.5 19.8 18.0 16.0 12.8
Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation +22.0 +21.5 +9.5 +9.5
2.0 <2:1 <2:1 +24.4 +23.4 +11.5 +11.5 22.5 216 109
In a 50 system, DC to 4500MHz In a 50 system, DC to 6000MHz dBm dBm dBm dBm dB C/W C TCASE =+85C TCASE =+85C With 22 bias resistor At pin 8 with ICC =35mA At evaluation board connector, ICC =35mA See Note 2. Freq=1000MHz Freq=2000MHz Freq=1000MHz Freq=2000MHz Freq=2000MHz ICC =35mA, PDISS =110mW. (See Note 3.)
Thermal
ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean Time To Failures
35000 3.4 4.2 35 3.5 4.5 40
years V v mA
Power Supply
Device Operating Voltage Operating Current
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used. Note 2: The RF3376 must be operated at or below 40mA in order to achieve the thermal performance listed above. While the RF3376 may be operated at higher bias currents, 35mA is the recommended bias to ensure the highest possible reliability and electrical performance. Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 40mA over all intended operating conditions.
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS050524
RF3376
Pin 1 Function RF IN Description
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation:
Interface Schematic
2 3
GND RF OUT
( V SUPPLY - V DEVICE ) R = -----------------------------------------------------I CC
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 40mA over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 3.4V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Ground connection.
RF OUT
RF IN
4
GND
Package Drawing
1.04 0.80 0.50 0.30 1.60 1.40
3.10 2.90 0.48 0.36
2 PL
4.60 4.40
2.60 2.40
1.80 1.45 1.75 1.40
Dimensions in mm.
Shaded lead is pin 1.
0.43 0.38
0.53 0.41
Rev A6 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 8
RF3376
Application Schematic
VCC 4 22 100 pF + 1 F
100 pF RF IN
1
2
3
100 nH RF OUT 100 pF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 3 CON3 VCC1 GND 4 R1 22 C1 100 pF L1 100 nH C2 100 pF C3 100 pF + C4 1 F
VCC
J1 RF IN
50 strip
1
2
3
50 strip
J2 RF OUT
337x410, r.1
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS050524
RF3376
Evaluation Board Layout Board Size 1.195" x 1.000"
Board Thickness 0.033", Board Material FR-4
Rev A6 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 8
RF3376
Gain versus Frequency Across Temperature
25.0
Output P1dB versus Frequency Across Temperature
16.0
(ICC=35mA)
(ICC=35mA)
14.0 20.0
15.0
Output Power (dBm)
12.0
Gain (dB)
10.0
8.0
10.0 6.0 -40C 25C 85C 5.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0 4.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0 -40C 25C 85C
Frequency (MHz)
Frequency (MHz)
Output IP3 versus Frequency Across Temperature
30.0
Noise Figure versus Frequency Across Temperature
3.5
(ICC=35mA)
(ICC=35mA)
25.0
3.0
2.5
Noise Figure (dB)
20.0
OIP3 (dBm)
2.0
15.0
1.5
10.0
1.0 5.0 -40C 25C 85C 0.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
0.5
-40C 25C 85C 0.0 500.0 1000.0 1500.0 2000.0 2500.0 3000.0 3500.0
0.0
Frequency (MHz)
Frequency (MHz)
Input VSWR versus Frequency Across Temperature
4.0
Output VSWR versus Frequency Across Temperature
2.5
(ICC=35mA)
(ICC=35mA)
3.5
3.0
2.0
VSWR
2.5
VSWR
1.5
2.0
1.5 -40C 25C 85C 1.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0 1.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0
-40C 25C 85C 7000.0
Frequency (MHz)
Frequency (MHz)
6 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS050524
RF3376
-10.0
Reverse Isolation versus Frequency Across Temperature
(ICC=35mA)
Junction Temperature versus Power Dissipated
140.00
(TAMBIENT=85C)
130.00 -15.0
Junction Temperature (C)
-40C 25C 85C
Reverse Isolation (dB)
120.00
110.00
-20.0
100.00
-25.0
90.00
80.00
-30.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
70.00 0.07 0.08 0.09 0.10 0.11 0.12 0.13
Frequency (MHz) Power Dissipation versus Device Voltage Across Temperature (TAMBIENT=+85C)
Power Dissipated (Watts)
Bias Current versus Supply Voltage Across Temperature
60.0
0.20 0.18 0.16 0.14 0.12
(At evaluation board connector, RBIAS=22)
50.0
Power Dissipated (W)
40.0
ICC (mA)
0.10 0.08 0.06 0.04 0.02 0.00 3.10 3.12 3.14 3.16 3.18 3.20 3.22 3.24 3.26 3.28 3.30
30.0
20.0
10.0
-40C 25C 85C 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8
0.0
VPIN (V) Bias Current versus Devices Voltage Across Temperature (At Pin 3 of the RF3376)
60.0 55.0 50.0 45.0 40.0
VCC (V)
ICC (mA)
35.0 30.0 25.0 20.0 -40C 15.0 10.0 3.0 3.2 3.4 3.6 3.8 25C 85C
VPIN (V)
Rev A6 DS050524
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
7 of 8
RF3376
8 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A6 DS050524


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